K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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Page Read and Page Program need the same five address cycles following the required command input. The number of valid blocks is datasgeet with both cases of invalid blocks considered. Added addressing method for program operation 0. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks.
A recovery time of minimum 10? Invalid blocks are defined as blocks that contain one or more bad bits. This operation is also initiated by writing 00hh to the command register along with five address cycles.
This two-step sequence of setup followed by execution command ensures that memory contents are not datsaheet erased due to external noise conditions. Margin,quality,low-cost products with low minimum orders. Refer to the attached technical notes for appropriate management of invalid blocks. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page.
If erase operation results in an error, map out the failing block and replace it with another block. The column address of next data, which is going to be out, may be changed to the address which follows random data output command.
Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. The following possible failure modes should be considered to implement datawheet highly reliable system. The information regarding the invalid block s is so called as the invalid block information.
K9F2G08U0M-PCB0 | SAMSUNG | DATASHEET | PHOTO
The Page Program confirm command 10h initiates the programming process. Month Sales Transactions. Yes End Figure 3. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory.
WP pin provides hardware protection and is recommended k9v2g08u0m be kept at VIL during power-up and power-down.
Commands, address and data are latched on the rising edge of the WE pulse. The bytes X8 device or words X16 device of datsaheet within the selected page are transferred to the data registers in less than 25?
256M X 8 Bit / 128M X 16 Bit NAND Flash Memory
Once the command is latched, it does not need to be written for the following page read operation. The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h.
PRE pin controls activation of autopage read function. Each of the 32 cells resides in a different page. The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address input after power-on. Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The command register remains in Read ID mode until further commands are issued to it. After writing the first set of data up to byte X8 device or word X16 device into the selected cache registers, Cache Program command 15h instead of actual Page Program 10h is inputted to make cache registers free and to start internal program operation.
Those are latched on the rising edge of WE. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell.
The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. RE or CE does not need to be toggled for updated status. The system design must be able to mask out the invalid block s via address mapping. The Program Confirm command 10h is required to actually begin the programming operation.
Refer to the qualification report for the actual data. Two types of operations are available: For this reason, two bit ECC is recommended for copy-back operation. Freight and Payment Recommended logistics Recommended bank.
A NAND structure consists of 32 cells. An internal voltage detector disables all functions whenever Vcc is below about 1. Unique ID for Copyright Protection? Random data output can be operated multiple times regardless of how many times it is done in a page. The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Buffer memory of the controller. The internal high voltage generator is reset when the WP pin is active low. Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased.